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Labor activity

Pavel Parchinsky graduated from the Physics Department of Tashkent State University (now National University of Uzbekistan) in 1992 with a degree in physics. After graduation, he was retained at the Department of Physics of Semiconductors and Dielectrics as an engineer. In 1993, he entered the graduate school at Tashkent State University in the field of physics of semiconductors and dielectrics. In 1996, he defended his PhD thesis on the topic “Investigation of the electrophysical properties of the silicon – passivating coating interface” in the Special Council at Tashkent State University. From 1997 to 2000, he was a PostDoc student at the National University of Uzbekistan (NUUz).

Since 2001, he has been an acting associate professor at the Department of Physics of Semiconductors and Dielectrics at NUUz. Since 2010 and up to now he has been an associate professor at the Department of Physics of Semiconductors and Dielectrics of NUUz (now the Department of Physics of Semiconductors and Polymers of the Faculty of Physics of NUUz).

In 2004-2006 and 2007-2008, he worked as a visiting researcher at the Chungnam National University (Republic of Korea). In 2011-2012, as part of the MANECA program, he completed an internship at the Technical University of Berlin in the group of Prof. Mario Dane.

In 2015-2016, he worked at the International Institute of Solar Energy as Head of the Department of Photovoltaic Systems.

In 2019, as a scholarship holder of the El Yurt Foundation, Umidi completed an internship at the Nano-Information Technology Academy at Donguk University in Seoul, Republic of Korea.

In 2020-2025, he participated in joint educational projects of the European Union ERASMUS+ NICOPA, SPACECOM and INMACOM aimed at introducing advanced educational technologies in higher education institutions of the Republic of Uzbekistan.

In 2021-2025– as a visiting professor, he lectured at the Ulsan National Institute of Science and Technology (Ulsan Republic of Korea) and Chungbuk State University (Chungbuk National University, Cheongju, Republic of Korea) and Gomel State University (Gomel, Republic of Belarus).

He lecturing the following disciplines: Mechanics (general physics course), Solid State Physics, Dielectric Physics, Semiconductor Surface Physics, Methods for measuring semiconductor parameters, Fundamentals of Crystallography, Multilayer Photosensitive Structures, Physics of magnetic Semiconductors and Spintronics, Materials Science of Semiconductors and Optical Materials, Physics of Semiconductor Devices, e.c.t.

Research interests: Physical processes at the semiconductor-dielectric interface, Methods for measuring the parameters of semiconductor structures, Magnetic semiconductors and structures based on them, Promising photovoltaics materials, Transparent conductive and insulating oxide materials.

Over the years of his scientific and pedagogical activity, P.B. Parchinsky has published over 200 scientific and methodological works, including 40 articles in journals included in the Scopus and WoS databases and 3 textbooks). Since 2000 y. he has been actively participated in national and international scientific projects as a scientific leader and research fellow. He conducts active international scientific cooperation with scientific centers of the Republic of Korea, Germany, Belarus, China and Russia.

Participated in more than 80 scientific international and national scientific conferences. Participated in the organization of international and national scientific conferences.

Methodical publications

Dissertation summary

Scientific publications

Electronic Density of States at the Interface between Silicon and Lead Borosilicate Glass //Inorganic Materials, Vol. 36, No. 5, 2000, pp. 502-503. Translated from Neorgan&heskie Materialy, Vol. 36, No. 5, 2000, pp. 608--610.

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Certificates

PhD Diploma

  • Yaratilgan vaqti:2026-02-17
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сертификат о повышении квалификации 2019

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Video lectures

Projects

Механизмы формирования и фотоэлектрические свойства сложнооксидных плёнок с регулируемой шириной запрещённой зоны для создания фоточувствительных структур в коротковолновом диапазоне

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